5962-01-302-0502, 5962013020502 (Microcircuit Memory) - National Stock Number Lookup
NSN 5962-01-302-0502 of part number IDT6116SA55L28B, CY6116-55LMB, CY6116-55LMB, CY6116-55LMB, 84036113X, 84036113B, 84036113A, 84036113A, 84036113A, 84036, 84036, 84036, 5962-8403611B3X, 5962-8403611B3X, 5962-8403611B3X, 5962-8403611B3B, 5962-8403611B3A, 5962-8403611B3A, 5962-8403611B3A by the manufacturer, Cypress Semiconductor Inc, Dla Land And Maritime, Integrated Device Technology Inc is in stock and ready to ship out. We make NSN parts purchasing as simple as possible. We list corresponding components such as 5962-01-302-0502 so that you can make the purchasing decision that is right for you. Our dedicated team are on hand to help source any-hard-find NSN parts or answer any procurement questions. We only source from manufacturers we trust and are the only independent distributor with a NO CHINA SOURCING policy. Unlike other companies, we pair every customer with a dedicated account manager. We respond to all RFQs within 15 minutes. Submit an RFQ today to get started.
5962-01-302-0502 NSN Information
| Alternative NSN: 5962-01-302-0502 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013020502 |
| NCB Code: USA (01) |
| Manufacturers: Cypress Semiconductor Inc, Dla Land And Maritime, Integrated Device Technology Inc |
NSN 5962-01-302-0502 Manufacturing Part Numbers
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| IDT6116SA55L28B | integrated device technology inc | microcircuit memory | Avl | RFQ |
| CY6116-55LMB | integrated device technology inc | microcircuit memory | Avl | RFQ |
| CY6116-55LMB | dla land and maritime | microcircuit memory | Avl | RFQ |
| CY6116-55LMB | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| 84036113X | dla land and maritime | microcircuit memory | Avl | RFQ |
| 84036113B | dla land and maritime | microcircuit memory | Avl | RFQ |
| 84036113A | integrated device technology inc | microcircuit memory | Avl | RFQ |
| 84036113A | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| 84036113A | dla land and maritime | microcircuit memory | Avl | RFQ |
| 84036 | integrated device technology inc | microcircuit memory | Avl | RFQ |
| 84036 | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| 84036 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8403611B3X | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8403611B3X | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| 5962-8403611B3X | integrated device technology inc | microcircuit memory | Avl | RFQ |
| 5962-8403611B3B | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8403611B3A | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8403611B3A | integrated device technology inc | microcircuit memory | Avl | RFQ |
| 5962-8403611B3A | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
Product Specification of NSN 5962013020502
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 060 INCHES MINIMUM AND 0 100 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-55 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND WENABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CRHL | BIT QUANTITY16384 |
| MEMORY | CSWJ | WORD QUANTITY2048 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 LEADLESS |
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