5962-01-280-5488, 5962012805488 (Microcircuit Memory) - National Stock Number Lookup
NSN 5962-01-280-5488 of part number UM19-02, UM19-02, UM19 02, M.28469-30, IDT6116SA90DB, IDT6116SA120DB, IDT6116SA120DB, IDT6116SA120DB, IDT6116S90CB, IDT6116S-90DB, IDT6116S-90DB, IDT6116S-90DB, HM6116P, HM1-65162-5, HM1-6116-2, HM1 65162 8, B77T0543-0143, B77T0543-0143, B77T0543-0143, A584A344-329 by the manufacturer, Anritsu America Inc, Boeing Company The, Eldec Corporation, Honeywell International Inc, Integrated Device Technology Inc is in stock and ready to ship out. We make NSN parts purchasing as simple as possible. We list corresponding components such as 5962-01-280-5488 so that you can make the purchasing decision that is right for you. Our dedicated team are on hand to help source any-hard-find NSN parts or answer any procurement questions. We only source from manufacturers we trust and are the only independent distributor with a NO CHINA SOURCING policy. Unlike other companies, we pair every customer with a dedicated account manager. We respond to all RFQs within 15 minutes. Submit an RFQ today to get started.
5962-01-280-5488 NSN Information
Alternative NSN: 5962-01-280-5488 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012805488 |
NCB Code: USA (01) |
Manufacturers: Anritsu America Inc, Boeing Company The, Eldec Corporation, Honeywell International Inc, Integrated Device Technology Inc, Intersil Inc, Kearfott Corporation, Marconi Electronics Inc, Rca Corp |
NSN 5962-01-280-5488 Manufacturing Part Numbers
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
UM19-02 | rca corp | microcircuit memory | Avl | RFQ |
UM19-02 | intersil inc | microcircuit memory | Avl | RFQ |
UM19 02 | eldec corporation | microcircuit memory | Avl | RFQ |
M.28469-30 | marconi electronics inc | microcircuit memory | Avl | RFQ |
IDT6116SA90DB | integrated device technology inc | microcircuit memory | Avl | RFQ |
IDT6116SA120DB | integrated device technology inc | microcircuit memory | Avl | RFQ |
IDT6116SA120DB | rca corp | microcircuit memory | Avl | RFQ |
IDT6116SA120DB | eldec corporation | microcircuit memory | Avl | RFQ |
IDT6116S90CB | integrated device technology inc | microcircuit memory | Avl | RFQ |
IDT6116S-90DB | integrated device technology inc | microcircuit memory | Avl | RFQ |
IDT6116S-90DB | rca corp | microcircuit memory | Avl | RFQ |
IDT6116S-90DB | eldec corporation | microcircuit memory | Avl | RFQ |
HM6116P | anritsu america inc | microcircuit memory | Avl | RFQ |
HM1-65162-5 | intersil inc | microcircuit memory | Avl | RFQ |
HM1-6116-2 | intersil inc | microcircuit memory | Avl | RFQ |
HM1 65162 8 | intersil inc | microcircuit memory | Avl | RFQ |
B77T0543-0143 | rca corp | microcircuit memory | Avl | RFQ |
B77T0543-0143 | eldec corporation | microcircuit memory | Avl | RFQ |
B77T0543-0143 | boeing company the | microcircuit memory | Avl | RFQ |
A584A344-329 | kearfott corporation | microcircuit memory | Avl | RFQ |
8516085-604 | honeywell international inc | microcircuit memory | Avl | RFQ |
6116SA-90DB | integrated device technology inc | microcircuit memory | Avl | RFQ |
6116S-90DB | integrated device technology inc | microcircuit memory | Avl | RFQ |
6116AE2 | rca corp | microcircuit memory | Avl | RFQ |
6116AE2 | eldec corporation | microcircuit memory | Avl | RFQ |
61165 | intersil inc | microcircuit memory | Avl | RFQ |
2808536-6 | honeywell international inc | microcircuit memory | Avl | RFQ |
Product Specification of NSN 5962012805488
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | TRANSMITTER,COUNTERMEASURES TRAINGING SIGNAL AN/MLQ-T4 |
CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 70.00 MILLIAMPERES REVERSE CURRENT, DC ABSOLUTE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/291 GOVERNMENT SPECIFICATION |
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