5962-01-197-8703, 5962011978703 (Microcircuit Memory) - National Stock Number Lookup
NSN 5962-01-197-8703 of part number SYMC2148H-2, SYMC2148H-2, SYMC2148H-2, SYMC2148H 2, G303488-103, G111397-1, G111397-1, G111397-1, ES5455-02, ES5455-02, ES5455-02, CY2148-55DMB, CY2148-55DBM, CY2148-55DBM, CY2148-55DBM, AM2148-55 BVA, AM2148-45DM-B, AM2148-45 BVA, AM2148-45 BVA, AM2148-45 BVA by the manufacturer, Advanced Micro Devices Inc, Bae Systems Information And Electronic Systems Integration I, Cypress Semiconductor Inc, Drs Sustainment Systems Inc, Inspektorat Wsparcia Sil Zbrojnych is in stock and ready to ship out. We make NSN parts purchasing as simple as possible. We list corresponding components such as 5962-01-197-8703 so that you can make the purchasing decision that is right for you. Our dedicated team are on hand to help source any-hard-find NSN parts or answer any procurement questions. We only source from manufacturers we trust and are the only independent distributor with a NO CHINA SOURCING policy. Unlike other companies, we pair every customer with a dedicated account manager. We respond to all RFQs within 15 minutes. Submit an RFQ today to get started.
5962-01-197-8703 NSN Information
| Alternative NSN: 5962-01-197-8703 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011978703 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc, Bae Systems Information And Electronic Systems Integration I, Cypress Semiconductor Inc, Drs Sustainment Systems Inc, Inspektorat Wsparcia Sil Zbrojnych, Raytheon Company, Synertek |
NSN 5962-01-197-8703 Manufacturing Part Numbers
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| SYMC2148H-2 | raytheon company | microcircuit memory | Avl | RFQ |
| SYMC2148H-2 | drs sustainment systems inc | microcircuit memory | Avl | RFQ |
| SYMC2148H-2 | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| SYMC2148H 2 | synertek | microcircuit memory | Avl | RFQ |
| G303488-103 | raytheon company | microcircuit memory | Avl | RFQ |
| G111397-1 | raytheon company | microcircuit memory | Avl | RFQ |
| G111397-1 | drs sustainment systems inc | microcircuit memory | Avl | RFQ |
| G111397-1 | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| ES5455-02 | raytheon company | microcircuit memory | Avl | RFQ |
| ES5455-02 | drs sustainment systems inc | microcircuit memory | Avl | RFQ |
| ES5455-02 | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| CY2148-55DMB | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| CY2148-55DBM | raytheon company | microcircuit memory | Avl | RFQ |
| CY2148-55DBM | drs sustainment systems inc | microcircuit memory | Avl | RFQ |
| CY2148-55DBM | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| AM2148-55 BVA | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| AM2148-45DM-B | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| AM2148-45 BVA | raytheon company | microcircuit memory | Avl | RFQ |
| AM2148-45 BVA | drs sustainment systems inc | microcircuit memory | Avl | RFQ |
| AM2148-45 BVA | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| AM2148 45 BVA | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| 5962PL0930421 | inspektorat wsparcia sil zbrojnych | microcircuit memory | Avl | RFQ |
| 312234-003 | bae systems information and electronic systems integration i | microcircuit memory | Avl | RFQ |
Product Specification of NSN 5962011978703
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.960 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES NOMINAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1200.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND HERMETICALLY SEALED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -3.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | BIT QUANTITY 4096; WORD QUANTITY 1024 |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
NSN 5962-01-197-8703 - Similar National Stock Numbers
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